型号:

PHU77NQ03T,127

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N-CH 25V 75A I-PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
PHU77NQ03T,127 PDF
标准包装 75
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 25V
电流 - 连续漏极(Id) @ 25° C 75A
开态Rds(最大)@ Id, Vgs @ 25° C 9.5 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 3.2V @ 1mA
闸电荷(Qg) @ Vgs 17.1nC @ 10V
输入电容 (Ciss) @ Vds 860pF @ 12V
功率 - 最大 107W
安装类型 通孔
封装/外壳 TO-251-3 长引线,IPak,TO-251AB
供应商设备封装 I-Pak
包装 管件
其它名称 934060504127
PHU77NQ03T
PHU77NQ03T-ND
相关参数
GBC18DCMS Sullins Connector Solutions CONN EDGECARD 36POS .100" WW
PHD77NQ03T,118 NXP Semiconductors MOSFET N-CH 25V 75A DPAK
SMMDL914T1G ON Semiconductor DIODE SWITCH FAST 100V SOD323
XQC-00 Excelsys Technologies Ltd POWER CHASSIS 1200W 6 SLOT
IRS2153DSPBF International Rectifier IC DVR HALF BRIDGE SELF OSC 8SOI
PH9030L,115 NXP Semiconductors MOSFET N-CH 30V 63A LFPAK
SMMDL6050T1G ON Semiconductor DIODE SWITCHING 70V SOD-323
XZA-00 Excelsys Technologies Ltd POWER CHASSIS 600W 6 SLOT
IRS2004SPBF International Rectifier IC DRIVER HALF BRIDGE 200V 8SOIC
XVC-01 Excelsys Technologies Ltd POWER CHASSIS 1000W 6 SLOT
PH6030L,115 NXP Semiconductors MOSFET N-CH 30V 76.7A LFPAK
SBAS20HT1G ON Semiconductor DIODE SWITCH 200V 200MA SOD-323
XQB-00 Excelsys Technologies Ltd POWER CHASSIS 900W 6 SLOT
PH4330L,115 NXP Semiconductors MOSFET N-CH 30V 95.9A LFPAK
IRS2003SPBF International Rectifier IC DRIVER HALF BRIDGE 200V 8SOIC
PH1875L,115 NXP Semiconductors MOSFET N-CH 75V 45.8A LFPAK
IXTQ102N15T IXYS MOSFET N-CH 150V 102A TO-3P
XBA-01 Excelsys Technologies Ltd POWER CHASSIS 400W 6 SLOT
IRS2153DSTRPBF International Rectifier IC DVR HALF BRIDG SELF OSC 8SOIC
IXTP102N15T IXYS MOSFET N-CH 150V 102A TO-220